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液晶与显示 2011, 26(2) 165-169  ISSN:  CN

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器件制备技术及器件物理
不同狭缝与遮挡条设计对TFT特性的影响与规律
周伟峰1, 薛建设1, 金基用2, 刘翔1, 明星2, 郭建2, 陈旭2, 闵泰烨2
1. 京东方科技集团 技术研发中心,北京 100176;
2. 北京京东方光电科技有限公司,北京 100176
摘要: 通过对掩膜版上不同狭缝与遮挡条设计与TFT沟道形貌、电学特性相互关系的分析,发现随着狭缝与遮挡尺寸的减小,TFT的电学特性、沟道处光刻胶起伏与最终关键尺寸偏移量都会改善。狭缝的尺寸比遮挡条的尺寸对TFT特性的影响更加显著。考虑到沟道转角处的短路几率问题,小的狭缝与遮挡条尺寸设计更加适合于四次掩膜光刻工艺,转角处的缺陷可以通过调整遮挡条的尺寸来避免。
关键词 薄膜晶体管液晶显示器   沟道设计   四次掩膜曝光  
Effects and Regularity of Different Slit & Bar Design on TFT Characteristics
ZHOU Wei-feng1, XUE Jian-she1, KIM Ki-yong2, LIU Xiang1, MING Xing2, GUO Jian2, CHEN Xu2, MIN Tai-ye2
1. Technology Research Institute, BOE Technology Group Co. Ltd., Beijing 100176, China;
2. Beijing BOE Optoelectronics Technology Co. Ltd., Beijing 100176, China
Abstract: By analyzing the relation among different slit & bar design of mask, TFT channel profile and electric characteristic, its found that the TFT electric characteristic, ripple size and channel FICD bias are becoming better while slit or bar size decreases. The slit size has greater influence than bar size on TFT characteristic. Considering the ratio of short in the corner of channel, the small slit & bar design is suitable for four mask processing, and the corner defect can be avoided by tuning bar size.
Keywords: TFT-LCD   channel design   four mask  
收稿日期 2010-04-20 修回日期 2010-05-25 网络版发布日期  
基金项目:

通讯作者:
作者简介: 作者简介 : 周伟峰 (1980-),男,江苏江阴人,硕士,高级工程师,主要从事与液晶显示器相关的技术工作。
作者Email: zhouweifeng@boe.com.cn

参考文献:
[1] Tsukada T. TFT/LCD Liquid-Crystal Displays Addressed by Thin-Film Transistors [M]. London: Gordon and Breach Publishers, 1996:1. [2] Kim J H, Kim H, Ha D S, et al. New materials for inkjet LCD color filter manufacturing [C]IMID Conference Proceedings, Daegu, South Krean: IMID, 2006:1497-1501. [3] Kim H J, Almanza-Workman A, Chaiken A, et al. Roll-to-roll fabrication of active-matrix backplanes using self-aligned imprint lithography (sail) [C]IMID Conference Proceedings, Daegu, South Krean:IMID, 2006:1539-1543. [4] Nakata M, Ishimaru M, Ichikawa S, et al. Novel optical compensation films for IPS-LCDs[C]SID Conference Proceedings, San Francisco USA: SID, 2006:420-424. [5] Choi S J, Cho J H, Han K Y, et al. Novel four-mask process in the FFS TFT-LCD with optimum multiple-slit design applied by the use of a gray-tone mask [C]SID Conference Proceedings, Boston USA:SID, 2005:16-21.
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