Oxidation-Resistant of Cr/Cu/Al/Cr Thin Film Electrodes
WENG Wei-xiang, YU Guang-long, JIA Zhen, LI Yu, GUO Tai-liang
College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002,China
Novel Cr/Cu/Al/Cr thin film electrodes were prepared by DC magnetron sputtering and wet etching technology, in which Al thin film was used as the protective layer for Cu layer. The change of the crystal structure, surface morphology and electric resistivity of the thin films and electrodes before and after heat treatment were studied. The Al layer played a key role as an oxygen diffusion barrier layer, for its protection, the Cr/Cu/Al/Cr thin film still had good thermal stability when the heat treatment was below 600 ℃.Meanwhile, the oxidation diffusion from the lateral edge of the electrodes as the temperature increased caused the decrease of the conduction of the electrodes. The electric resistivity was increasing obviously after 500 ℃ heat treatment, and the oxidation region was expanded from the edge to the surface of the electrode. Nonetheless, the thin film electrode fulfilled the requirements of field emission device for its stable resistance when post annealing tempera-ture was 430 ℃, which was 7.2×10-8 Ω·m. Based on the new electrode, the FED device was fabricated for verifying its oxidation resistance.
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